High aspect ratio trench is used for electric insulation of power IC and we accomplished trench gap-fill technology using high quality HDP-CVD(high density plasma chemical vapor deposition) Oxide.
Typically, CMP performance of ceria based slurry is better than silica based slurry. Because Ceria based slurry offers better etch selectivity of the oxide to nitride than silica based slurry to reduce oxide d...
Amorphous carbon layer(ACL) deposition becomes an inevitable process thin resist itself cannot provide suitable etch selectivity to sub-layer. Although, the ACL hardmask has several advantages such as high et...
As scales of device get smaller, shallow trench isolation, which is replacing all the variation of local oxidation of silicon(LOCOS), and chemical-mechanical polishing(CMP)-based processes were introduced. Sh...
Bosch deep silicon etching is nowadays widely used on inductive coupled plasma equipment. Mainly facts in this Bosch process are the etch rate, the aspect ratio and the scallop. In this case of scallop, large...
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